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DDL Services
DDL Offerings
Detector Development Lab Services
Wet Sector
Equipment
Wafer Size
 Equipment Specs
Solvent hoods
4" and 6"
  • Megasonics and ultrasonic wafer cleaners
Corrosive (acids and bases) hoods
4" and 6"
  • Includes heated, recirculated bath for E-6 metal etch
  • Recirculated SC1 and SC2 standard cleaning baths for silicon wafers
Spin/Rinse/Dry
4" and 6"
  

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Reactive Ion Etch (RIE)
Equipment
Wafer Size
 Equipment Specs
Reactive ion etch
4" and 6"
  • Dedicated F-based tool for dielectrics and Si
  • Dedicated F-based tool for metals
  • Cl-based tool for Al, AlO2, AlGaAs
  • Ion milling tool for Au/Cu dry etch
Asher
4" and 6"
  • O2 plasma
Deep RIE
4" and 6"
  • Bosch process
  • Standard-rate chamber
  • High-rate chamber
  • Through-wafer etching
XeF2 isotropic silicon etch
4" and 6"
  

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Photolithography
Equipment
Wafer Size
 Equipment Specs
Mask layout editor – DW2000
n/a
  • Minimal use available
Two Karl Suss aligners
4" and 6"
  • Contact alignment (1X)
  • Standard min line/space: 2 µm
  • Advanced min line/space: 1 µm
  • Front-to-back alignment
Coat, develop, bake, and vapor prime systems
4" and 6"
  • Many types of in-house resists including thick, thin, positive, and negative
Front-to-back alignment checker
4" and 6"
  • Front-to-back side alignment (std = 5 µm; adv = 1 µm)
High power and low power inspection microscopes
4" and 6"
  
Karl Suss MA-6 wafer aligner equipped for wafer bond alignment
4" and 6"
  
E-beam direct-write lithography via SEM for small-scale nanotechnology photo
4" and 6"
  • 100–200 µm reticle area

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Metal
Equipment
Wafer Size
 Equipment Specs
Sputter
4" and 6"
  • DC magnetron
  • Dedicated superconducting bi-layer chamber (Mo and Au)
  • 1", 2", 3", and 8" targets
  • In-house targets include: Nb, Mo, Al, Au, Cu, Ti, MoN, MoAu, MoCu
Evaporation
4" and 6"
  • Dome and planetary set up available
  • E-beam and resistive sources
  • In-house metals include: Al, Au, Cu, Ti, Al2O3, In, Mo
  • 45⁰ angled deposition for sidewall coverage
  • Dedicated magnetic material evaporation chambers
  • Dedicated indium deposition chamber
Plating baths
4" and 6"
  • Materials include Bi and large grain Au geared specifically for cryogenic applications

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Implant & Deposition
Equipment
Wafer Size
 Equipment Specs
High-energy ion implantation
4", 6", and 8"
  • P, B ions up to 1 MeV and 1 milliamp up to 3 MeV with double or triple ionized species
Low-pressure chemical vapor deposition (LPCVD)
4"
  • Thin films: oxide, nitride, polysilicon
Plasma-enhanced chemical vapor deposition (PECVD)
4" and 6"
  • Thin film: nitiride

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Backend Processing
Equipment
Wafer Size
 Equipment Specs
Wafer lapping
4"
  • Grind and polish
  • CMP-capable (dependant on chemicals needed)
Dicing saws
4" and 6"
  • Laser and diamond blade
Wire bonders
  • Automated and manual
Critical point drying
4" and 6"
  • CO2 based
Freeze drying
4" and 6"
  
Wafer bonders
4" and 6"
  • Bonding types: anodic, fusion, adhesive
  • Capable of applying vacuum, pressure, heat, and voltage bias
FineTech pick and placer
4" and 6"
  • Pick and placer used in conjunction with FC bonder to preassemble an array of devices to bond together
Karl Suss FC 150 flip-chip bonder
4" and 6"
  

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Metrology
Equipment
Wafer Size
 Equipment Specs
Ellipsometer
4" and 6"
  
Tencor stylus profiler
4" and 6"
  
Stress analyzer
4" and 6"
  • Wafer bow measurements
Cascade probe station
4" and 6"
  
Scanning electron microscope with energy dispersive X-ray spectroscopy
4" and 6"
  
Veeco deep access stylus profiler
4" and 6"
  

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  • Page Last Updated: Jan 6, 2010
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